Toshiba Develops 16-Gigabit NAND Flash Memory With 43-Nanometer CMOS Process Technology
TOKYO and IRVINE, Calif., Feb. 6 /PRNewswire/ — Toshiba Corp.
(Toshiba), reinforcing its leadership in the development and fabrication of
powerful, high density NAND flash memory, today announced with Toshiba
America Electronic Components, its subsidiary in the Americas, development
of technology for a 16-gigabit(1) (Gb) NAND flash memory chip, fabricated
with 43-nanometer(2) (nm) process technology co-developed with SanDisk
Corporation of Milpitas, California. The technology of the new chip was
reported on Feb. 6, in Session 23.6 of the International Solid-State
Circuits Conference (ISSCC) in San Francisco. Read more